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Tungsten Copper Heat Sink Used For Integrated Circuit
Mar 30, 2017

Tungsten copper heat sink for integrated circuit connects the required transistors, resistors, capacitors and inductors and other components and wiring, made in a small or a few small pieces of semiconductor chips or dielectric substrate, and then packaged in a tube, the circuit has become the desired micro-structure; it combines all components as a whole in structure and promote the development towards miniaturization, low power consumption. Tungsten copper heat sink for integrated circuit has many advantages, such as small volume, light weight, less lead wire and welding point, long life, high reliability, good performance and other advantages, and low cost, easy for mass production. It is widely used not only in industry, civil electronic equipment, such as tape recorders, televisions, computers, but also in military, communications, remote control. With the integrated circuit to the assembly of electronic equipment, the assembly density than the transistor can improve a few times to several thousand times, the equipment can also greatly improve the stability of working.


The main processes of tungsten copper heat sink includes:

1. Infiltration: Manufacture tungsten skeleton with density and strength by pre-sintering, then copper with lower melting point melts and infiltrate into the skeleton to obtain relatively dense tungsten copper material;

2. High-temperature liquid phase sintering: As a large difference between tungsten and copper, it can directly use above the melting point of copper high temperature liquid-phase sintering to promote its densification. In order to improve the density, it should be re-pressure, hot pressing, hot forging and other treatment after liquid sintering;

3. Activated liquid phase sintering: In the W-Cu system by adding a small amount of Co, Ni, Fe, Pd and other activated elements as the alloy in the middle phase can increase the miscibility between tungsten and copper. But the addition of activator has great damage to thermal conductivity and conductivity, and is not suitable for thermal control and electronic control materials.

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